Optimizing performance of an organic field effect transistor
Chandra Rao Piridi, DBRK Murthy, GVS Jayapal Rao
The main aim of the present investigation is to study the emerging field of organic electronics and development of new organic field electronic transistors. Performance of an Organic Field Electronic Transistor OFET based on p-type organic semiconductor - poly 3-hexylthiophene (P3HT) in bottom gate bottom contact (BGBC) configuration is analyzed and established optimum processing conditions using various surface treatments. The experiments for fabricating, characterizing and OFET for measuring its performance and improvements with HMDS surface treatment for passivating dangling bonds at dielectric–organic semiconductor interface are studied in this paper. The obtained results are compared with an OFET fabricated without HMDS surface treatment. The HMDS surface treatment makes the gate dielectric (SiO2) hydrophobic from hydrophilic and satisfies dangling bonds at gate dielectric surface, so improves interface for organic semiconductor. With HMDS surface treatment the OFET shows better results like mobility 2.19×10-3 cm2/V-s compared to 8.1×10-4 cm2/V-s for the device without HMDS surface treatment for the device with W/L=24600/70 and for devices with W/L 24300 μm/50μm the improvement was from 9.37 x 10-04 cm2/V-s to 1.32 x 10-03 cm2/V-s. This result indicates the OFETs with higher mobility results in better response time and faster operation when used for making organic electronic components based circuits.
Chandra Rao Piridi, DBRK Murthy, GVS Jayapal Rao. Optimizing performance of an organic field effect transistor. International Journal of Academic Research and Development, Volume 2, Issue 3, 2017, Pages 28-33